elektronische bauelemente SSD2504S 5.4a , 100v , r ds(on) 370m ? n-ch enhancement mode power mosfet 08-may-2014 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) 2504s ???? ? rohs compliant product a suffix of ?-c? specifies halogen free description the SSD2504S is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features ? advanced high cell density trench technology ? super low gate charge ? excellent cdv/dt effect decline ? 100% eas guaranteed ? green device available marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t c =25c 5.4 a continuous drain current @v gs =10v 1 t c =100c i d 3.4 a pulsed drain current 2 i dm 11 a t c =25c 20.8 total power dissipation 3 t a =25c p d 1.13 w operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 110 c / w maximum thermal resistance junction-case 1 r jc 6 c / w ? ? gate ? ? source ? ? drain date code millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.80 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.25 h 0.64 1.20
elektronische bauelemente SSD2504S 5.4a , 100v , r ds(on) 370m ? n-ch enhancement mode power mosfet 08-may-2014 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 12 - s v ds =5v, i d =3a gate resistance r g - 2 - ? v ds =v gs =0, f =1.0mhz gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =80v, v gs =0 - - 370 v gs =10v, i d =5a static drain-source on-resistance 2 r ds(on) - - 380 m ? v gs =4.5v, i d =3a total gate charge q g - 9.6 - gate-source charge q gs - 1.83 - gate-drain (?miller?) change q gd - 1.85 - nc i d =5a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 1.4 - rise time t r - 30.6 - turn-off delay time t d(off) - 11.2 - fall time t f - 6 - ns v dd =50v i d =5a v gs =10v r g =3.3 ? r l =30 ? input capacitance c iss - 508 - output capacitance c oss - 29 - reverse transfer capacitance c rss - 16.4 - pf v gs =0 v ds =15v f =1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 , t j =25c, reverse recovery time t rr - 20 - ns reverse recovery charge q rr - 19 - nc i f =5a, dl/dt=100a/ s, t j =25c, continuous source current 1,4 i s - - 5.4 a pulsed source current 2,4 i sm - - 11 a v d =v g =0, force current notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the power dissipation is limited by 150c, junction temperature 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente SSD2504S 5.4a , 100v , r ds(on) 370m ? n-ch enhancement mode power mosfet 08-may-2014 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSD2504S 5.4a , 100v , r ds(on) 370m ? n-ch enhancement mode power mosfet 08-may-2014 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
